Automotive-grade silicon carbide Power MOSFET
Description
SCTH100N120G2-AG
Datasheet
Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
TAB
7 1 H2PAK-7
Drain (TAB)
Gate (1) Driver source (2)
Power source (3, 4, 5, 6, 7)
N-chG1DS2PS34567DTAB
Features
Order code SCTH100N120G2-AG
VDS 1200 V
RDS(on)typ. 30 mΩ
ID 75 A
AEC-Q101 qualified High speed swit...
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