N-CHANNEL MOSFET
Description
Product Summary (Typ. @ VGS = 3.3V, TA = +25°C)
VDSS 12V
RDS(ON) 14.1mΩ
Qg 10.5nC
Qgd 4.1nC
ID 7.5A
Description
This new generation MOSFET is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. Using Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with m...
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