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NX6008NBK

Part Number	NX6008NBK
Manufacturer	nexperia
Description	N-channel MOSFET
Published	Aug 1, 2023
Detailed Description	NX6008NBK 60 V, N-channel Trench MOSFET 19 August 2021 Product data sheet 1. General description N-channel enhancement...
Datasheet	NX6008NBK PDF File

Overview

NX6008NBK 60 V, N-channel Trench MOSFET 19 August 2021 Product data sheet 1.
General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3.
Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.
5 V; Tamb = 25 °C...

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