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BAT54VY-Q

nexperia
Part Number BAT54VY-Q
Manufacturer nexperia
Description Schottky barrier triple diode
Published Aug 5, 2023
Detailed Description BAT54VY-Q Schottky barrier triple diode 20 April 2023 Product data sheet 1. General description General-purpose Schott...
Datasheet PDF File BAT54VY-Q PDF File

BAT54VY-Q
BAT54VY-Q

Overview
BAT54VY-Q Schottky barrier triple diode 20 April 2023 Product data sheet 1.
General description General-purpose Schottky, triple diode in a SOT363 ultra small and flat lead Surface-Mounted Device (SMD) plastic package.
2.
Features and benefits • Low forward voltage • Low capacitance • Ultra small and flat lead SMD plastic package • Flat leads: excellent coplanarity and improved thermal behavior • Qualified according to AEC-Q101 and recommended for use in automotive applications 3.
Applications • Ultra high-speed switching • Voltage clamping • Line termination • Reverse polarity protection 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Per diode IR reverse current VR reverse voltage Conditions VR = 25 V; Tamb = 25 °C Min Typ Max Unit - - 2 µA - - 30 V 5.
Pinning information Table 2.
Pinning information Pin Symbol Description 1 A1 anode (diode 1) 2 A2 anode (diode 2) 3 A3 anode (diode 3) 4 K3 cathode (diode 3) 5 K2 cathode (diode 2) 6 K1 cathode (diode 1) Simplified outline 654 Graphic symbol K1 K2 K3 123 TSSOP6 (SOT363) A1 A2 A3 aaa-005704 Nexperia BAT54VY-Q Schottky barrier triple diode 6.
Ordering information Table 3.
Ordering information Type number Package Name BAT54VY-Q TSSOP6 Description Version plastic, surface-mounted package; 6 leads; 0.
65 mm pitch; SOT363 2.
1 mm x 1.
25 mm x 0.
95 mm body 7.
Marking Table 4.
Marking codes Type number BAT54VY-Q [1] % = placeholder for manufacturing site code Marking code[1] K9% 8.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Per diode VR reverse voltage IF forward current IFRM repetitive peak forward tp ≤ 10 ms; δ ≤ 0.
5 current IFSM non-repetitive peak forward current Per device; one diode loaded tp = 50 µs; square wave; Tj(init) = 25 °C tp = 10 ms; square wave; Tj(init) = 25 °C Tj Tamb Tstg junction temperature ambient temperature ...


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