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VS-3C10ET07T-M3

Vishay
Part Number VS-3C10ET07T-M3
Manufacturer Vishay
Description 650V Power SiC Gen 3 Merged PIN Schottky Diode
Published Aug 27, 2023
Detailed Description www.vishay.com VS-3C10ET07T-M3 Vishay Semiconductors 650 V Power SiC Gen 3 Merged PIN Schottky Diode, 10 A Base catho...
Datasheet PDF File VS-3C10ET07T-M3 PDF File

VS-3C10ET07T-M3
VS-3C10ET07T-M3

Overview
www.
vishay.
com VS-3C10ET07T-M3 Vishay Semiconductors 650 V Power SiC Gen 3 Merged PIN Schottky Diode, 10 A Base cathode 2 2 1 3 TO-220AC 2L 1 Cathode 3 Anode LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models Application Notes PRIMARY CHARACTERISTICS IF(AV) VR VF at IF at 150 °C TJ max.
IR at VR at 175 °C QC (VR = 400 V) Package 10 A 650 V 1.
46 V 175 °C 4.
5 μA 29 nC TO-220AC 2L Circuit configuration Single FEATURES • Majority carrier diode using Schottky technology on SiC wide band gap material • Improved VF and efficiency by thin wafer technology • Positive VF temperature coefficient for easy paralleling • Virtually no recovery tail and no switching losses • Temperature invariant...


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