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BAS16L-Q

nexperia
Part Number BAS16L-Q
Manufacturer nexperia
Description High-speed switching diode
Published Nov 26, 2023
Detailed Description BAS16L-Q High-speed switching diode 17 September 2021 Product data sheet 1. General description High-speed switching d...
Datasheet PDF File BAS16L-Q PDF File

BAS16L-Q
BAS16L-Q

Overview
BAS16L-Q High-speed switching diode 17 September 2021 Product data sheet 1.
General description High-speed switching diode, encapsulated in a lead less ultra small SOD882 Surface-Mounted Device (SMD) plastic package.
2.
Features and benefits • High switching speed: trr ≤ 4 ns • Low capacitance • Low leakage current • Reverse voltage: VR ≤ 100 V • Repetitive peak reverse voltage: VRRM ≤ 100 V • Small SMD plastic package • Qualified according to AEC-Q101 and recommended for use in automotive applications 3.
Applications • High-speed switching • General-purpose switching 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Per diode VR reverse voltage IR reverse current trr reverse recovery time Conditions VR = 80 V; Tamb = 25 °C IF = 10 mA; IR = 10 mA; RL = 100 Ω; IR(meas) = 1 mA; Tamb = 25 °C Min Typ Max Unit - - 100 V - - 0.
5 µA - - 4 ns Nexperia BAS16L-Q High-speed switching diode 5.
Pinning information Table 2.
Pinning information Pin Symbol Description 1 K cathode 2 A anode Simplified outline Graphic symbol 1 2 Transparent top view DFN1006-2 (SOD882) K A 006aab040 6.
Ordering information Table 3.
Ordering information Type number Package Name BAS16L-Q DFN1006-2 Description Version plastic, leadless ultra small package; 2 terminals; 0.
65 mm SOD882 pitch; 1 mm x 0.
6 mm x 0.
48 mm body 7.
Marking Table 4.
Marking codes Type number BAS16L-Q Marking code S2 BAS16L-Q Product data sheet All information provided in this document is subject to legal disclaimers.
17 September 2021 © Nexperia B.
V.
2021.
All rights reserved 2 / 10 Nexperia BAS16L-Q High-speed switching diode 8.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit Per diode VRRM repetitive peak reverse voltage - 100 V VR reverse voltage - 100 V IF forward current [1] - 215 mA IFSM non-repetitive peak tp = 1 µs; sq...


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