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TK210V65Z

Toshiba
Part Number TK210V65Z
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Jan 2, 2024
Detailed Description MOSFETs Silicon N-Channel MOS (DTMOS�) TK210V65Z 1. Applications • Switching Power Supplies 2. Features (1) Low drain-so...
Datasheet PDF File TK210V65Z PDF File

TK210V65Z
TK210V65Z

Overview
MOSFETs Silicon N-Channel MOS (DTMOS�) TK210V65Z 1.
Applications • Switching Power Supplies 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 0.
175 Ω (typ.
) (2) High-speed switching properties with the lower capacitance.
(3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.
61 mA) 3.
Packaging and Internal Circuit TK210V65Z DFN8x8 1: Gate 2: Source 1 3, 4: Source 2 5: Drain (heatsink) Notice: Only use source 1 pin for gate input signal return.
Please make sure that the main current flows into the source 2 pin.
4.
Absolute Maximum Ratings (Note) (Ta = 25 � unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage...


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