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TK25V60X

Toshiba
Part Number TK25V60X
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Jan 2, 2024
Detailed Description MOSFETs Silicon N-Channel MOS (DTMOS-H) TK25V60X 1. Applications • Switching Voltage Regulators 2. Features (1) Low dra...
Datasheet PDF File TK25V60X PDF File

TK25V60X
TK25V60X

Overview
MOSFETs Silicon N-Channel MOS (DTMOS-H) TK25V60X 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 0.
11 Ω (typ.
) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance.
(3) Enhancement mode: Vth = 2.
5 to 3.
5 V (VDS = 10 V, ID = 1.
2 mA) 3.
Packaging and Internal Circuit TK25V60X DFN8x8 1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink) Notice: Please use the source1 pin for gate input signal return.
Make sure that the main current flows into the source2 pins.
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 25 A Drain current (pulsed) (Note 1) IDP 100 Power dissipation (Tc = 25) PD 180 W Single-pulse avalanche energy (Note 2) EAS 306 mJ Avalanche current IAR 6.
2 A Reverse drain current (DC) (Not...


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