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TK28V65W5

Toshiba
Part Number TK28V65W5
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Jan 2, 2024
Detailed Description MOSFETs Silicon N-Channel MOS (DTMOS) TK28V65W5 1. Applications • Switching Voltage Regulators 2. Features (1) Low drai...
Datasheet PDF File TK28V65W5 PDF File

TK28V65W5
TK28V65W5


Overview
MOSFETs Silicon N-Channel MOS (DTMOS) TK28V65W5 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 0.
115 Ω (typ.
) by using Super Junction Structure: DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4.
5 V (VDS = 10 V, ID = 1.
6 mA) 3.
Packaging and Internal Circuit TK28V65W5 DFN8x8 1: Gate 2: Source 1 3,4: Source 2 5: Drain (Heatsink) Notice: Please use the source1 pin for gate input signal return.
Make sure that the main current flows into the source 2 pins.
4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 27.
6 A Drain current (pulsed) (Note 1) IDP 110 Power dissipation (Tc = 25 ) PD 240 W Single-pulse avalanche energy (Note 2) EAS 347 mJ Single-pulse avalanche current IAS 7 A Reverse drain current (DC) (Note 1) IDR ...



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