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TK2R4A08QM

Toshiba
Part Number TK2R4A08QM
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Jan 2, 2024
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS�-H) TK2R4A08QM 1. Applications • High-Efficiency DC-DC Converters • Switching Volta...
Datasheet PDF File TK2R4A08QM PDF File

TK2R4A08QM
TK2R4A08QM

Overview
MOSFETs Silicon N-channel MOS (U-MOS�-H) TK2R4A08QM 1.
Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2.
Features (1) High-speed switching (2) Small gate charge: QSW = 54 nC (typ.
) (3) Small output charge: Qoss = 210 nC (typ.
) (4) Low drain-source on-resistance: RDS(ON) = 1.
88 mΩ (typ.
) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.
5 to 3.
5 V (VDS = 10 V, ID = 2.
2 mA) 3.
Packaging and Internal Circuit TK2R4A08QM TO-220SIS 1: Gate 2: Drain 3: Source ©2020-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2021-01 2023-01-20 Rev.
2.
0 TK2R4A08QM 4.
Absolute Maximum Ratings (Note) (Ta = 25 � unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Single-pulse avalanche current Channel te...


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