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TK2R4E08QM

Toshiba
Part Number TK2R4E08QM
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Jan 2, 2024
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS�-H) TK2R4E08QM 1. Applications • High-Efficiency DC-DC Converters • Switching Volta...
Datasheet PDF File TK2R4E08QM PDF File

TK2R4E08QM
TK2R4E08QM

Overview
MOSFETs Silicon N-channel MOS (U-MOS�-H) TK2R4E08QM 1.
Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2.
Features (1) High-speed switching (2) Small gate charge: QSW = 52 nC (typ.
) (3) Small output charge: Qoss = 210 nC (typ.
) (4) Low drain-source on-resistance: RDS(ON) = 1.
97 mΩ (typ.
) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.
5 to 3.
5 V (VDS = 10 V, ID = 2.
2 mA) 3.
Packaging and Internal Circuit TK2R4E08QM TO-220 1: Gate 2: Drain (heatsink) 3: Source ©2020-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2021-01 2021-02-02 Rev.
1.
0 TK2R4E08Q...


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