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TK3R3E03GL

Toshiba
Part Number TK3R3E03GL
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Jan 2, 2024
Detailed Description MOSFETs Silicon N-Channel MOS (U-MOS-H) TK3R3E03GL 1. Applications • Switching Voltage Regulators 2. Features (1) Low d...
Datasheet PDF File TK3R3E03GL PDF File

TK3R3E03GL
TK3R3E03GL

Overview
MOSFETs Silicon N-Channel MOS (U-MOS-H) TK3R3E03GL 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 2.
6 mΩ (typ.
) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (3) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID =0.
5 mA) 3.
Packaging and Internal Circuit TK3R3E03GL 1: Gate 2: Drain (heatsink) 3: Source TO-220 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 V Drain current (DC) (Silicon Limit) (Note 1), (Note 2) ID 147 A Drain current (DC) (Note 1) ID 80 A Drain...


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