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TK6R4E10PL

Toshiba
Part Number TK6R4E10PL
Manufacturer Toshiba
Description Silicon N-channel MOSFET
Published Jan 3, 2024
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS�-H) TK6R4E10PL 1. Applications • High-Efficiency DC-DC Converters • Switching Volta...
Datasheet PDF File TK6R4E10PL PDF File

TK6R4E10PL
TK6R4E10PL

Overview
MOSFETs Silicon N-channel MOS (U-MOS�-H) TK6R4E10PL 1.
Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2.
Features (1) High-speed switching (2) Small gate charge: QSW = 17 nC (typ.
) (3) Small output charge: Qoss = 58 nC (typ.
) (4) Low drain-source on-resistance: RDS(ON) = 5.
5 mΩ (typ.
) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (6) Enhancement mode: Vth = 1.
5 to 2.
5 V (VDS = 10 V, ID = 0.
5 mA) 3.
Packaging and Internal Circuit TK6R4E10PL TO-220 1: Gate 2: Drain (heatsink) 3: Source ©2017-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2018-01 2021-01-25 Rev.
2.
0 TK6R4E10PL...


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