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TPC6502

Toshiba
Part Number TPC6502
Manufacturer Toshiba
Description Silicon NPN Transistor
Published Jan 5, 2024
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6502 High-Speed Switching Applications DC-DC Converter Applications Str...
Datasheet PDF File TPC6502 PDF File

TPC6502
TPC6502

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6502 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications TPC6502 Unit: mm • High DC current gain: hFE = 400 to 1000 (IC = 0.
3 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.
14 V (max) • High-speed switching: tf = 120 ns (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEX 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V DC Collector current IC 3.
0 A Pulse ICP 5.
0 Base current IB 300 mA Collector power dissipation DC t = 10 s 0.
8 PC (Note 1) 1.
6 W JEDE...


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