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TPCA8A08-H

Toshiba
Part Number TPCA8A08-H
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Jan 27, 2024
Detailed Description TPCA8A08-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) T...
Datasheet PDF File TPCA8A08-H PDF File

TPCA8A08-H
TPCA8A08-H

Overview
TPCA8A08-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A08-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • Built-in a schottky barrier diode Low forward voltage: VDSF = −0.
6 V (max) • High-speed switching • Small gate charge: QSW = 11 nC (typ.
) • Low drain-source ON-resistance: RDS (ON) = 3.
8 mΩ (typ.
) (VGS = 4.
5 V) • High forward transfer admittance: |Yfs| = 105 S (typ.
) • Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) 6.
0 ± 0.
3 5.
0 ± 0.
2 0.
95 ± 0.
05 Unit: ...


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