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TPCP8511

Toshiba
Part Number TPCP8511
Manufacturer Toshiba
Description Silicon NPN Transistor
Published Jan 30, 2024
Detailed Description Bipolar Transistors Silicon NPN Epitaxial Type TPCP8511 1. Applications • High-Speed Switching • DC-DC Converters • Phot...
Datasheet PDF File TPCP8511 PDF File

TPCP8511
TPCP8511

Overview
Bipolar Transistors Silicon NPN Epitaxial Type TPCP8511 1.
Applications • High-Speed Switching • DC-DC Converters • Photo Flashes 2.
Features (1) High DC current gain: hFE = 250 to 400 (IC = 0.
3 A) (2) Low collector-emitter saturation: VCE(sat) = 0.
18 V(max)(IB = 33 mA) (3) High-speed switching: tf = 38 ns(typ.
) 3.
Packaging and Internal Circuit TPCP8511 PS-8 1.
Collector 5.
Emitter 2.
Collector 6.
Collector 3.
Collector 7.
Collector 4.
Base 8.
Collector 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage VCBO 100 V VCEX 80 Collector-emitter voltage Emitter-base voltage Co...


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