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TJ200F04M3L

Toshiba
Part Number TJ200F04M3L
Manufacturer Toshiba
Description Silicon P-Channel MOSFET
Published Jan 31, 2024
Detailed Description MOSFETs Silicon P-Channel MOS (U-MOS) TJ200F04M3L 1. Applications • Automotive • DC-DC Converters • Motor Drivers 2. Fe...
Datasheet PDF File TJ200F04M3L PDF File

TJ200F04M3L
TJ200F04M3L

Overview
MOSFETs Silicon P-Channel MOS (U-MOS) TJ200F04M3L 1.
Applications • Automotive • DC-DC Converters • Motor Drivers 2.
Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 1.
45 mΩ (typ.
) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (4) Enhancement mode: Vth = -2.
0 to -3.
0 V (VDS = -10 V, ID = -1 mA) 3.
Packaging and Internal Circuit TJ200F04M3L TO-220SM(W) 1: Gate 2: Drain (heatsink) 3: Source ©2015-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2014-12 2020-06-24 Rev.
8.
0 TJ200F04M3L 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit...


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