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TPN12008QM

Toshiba
Part Number TPN12008QM
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Jan 31, 2024
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS-H) TPN12008QM 1. Applications • High-Efficiency DC-DC Converters • Switching Volta...
Datasheet PDF File TPN12008QM PDF File

TPN12008QM
TPN12008QM

Overview
MOSFETs Silicon N-channel MOS (U-MOS-H) TPN12008QM 1.
Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2.
Features (1) High-speed switching (2) Small gate charge: QSW = 6.
5 nC (typ.
) (3) Small output charge: Qoss = 21.
1 nC (typ.
) (4) Low drain-source on-resistance: RDS(ON) = 9.
6 mΩ (typ.
) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.
5 to 3.
5 V (VDS = 10 V, ID = 0.
2 mA) 3.
Packaging and Internal Circuit TPN12008QM TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2019-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2020-02 2020-02-18 Rev.
1.
0 ...


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