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AS4LC8M8S0

ETC

3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM


Description
Advance information ® AS4LC8M8S0 AS4LC4M16S0 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Features PC100/133 compliant Organization - 2,097,152 words × 8 bits × 4 banks (8M×8) - 1,048,576 words × 16 bits × 4 banks (4M×16) Fully synchronous - All signals referenced to positive edge of clock Four internal banks controlled by BA0/BA1 (bank select) High...



ETC

AS4LC8M8S0

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