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ASI2304

Advanced Semiconductor
Part Number ASI2304
Manufacturer Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Published Mar 24, 2005
Detailed Description ASI2304 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2304 is Designed for General Purpose Class C Power Amplifi...
Datasheet PDF File ASI2304 PDF File

ASI2304
ASI2304

Overview
ASI2304 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2304 is Designed for General Purpose Class C Power Amplifier Applications up tp 3000 MHz.
PACKAGE STYLE .
250 2L FLG A ØD C E .
060 x 45° CHAMFER B FEATURES: • PG = 9.
5 dB min.
at 4 W / 2300 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System DIM A L G H J F I K P MN MINIMUM inches / mm MAXIMUM inches / mm .
028 / 0.
71 .
740 / 18.
80 .
245 / 6.
22 .
128 / 3.
25 .
125 / 3.
18 .
110 / 2.
79 .
117 / 2.
97 .
560 / 14.
22 .
790 / 20.
07 .
225 / 5.
72 .
165 / 4.
19 .
003 / 0.
08 .
058 / 1.
47 .
119 / 3.
02 .
149 / 3.
78 .
032 / 0.
81 .
255 / 6.
48 .
132 / 3.
35 .
117 / 2.
97 .
570 / 14.
48 .
810 / 20.
57 .
235 / 5.
97 .
185 / 4.
70 .
007 / 0.
18 .
068 / 1.
73 .
135 / 3.
43 .
187 / 4.
75 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θ JC 600 mA 26 V 11.
5 W @ TC ≤ 50 C O B C D E F G H I J K L M N P -65 OC to +200 OC -65 OC to +200 OC 13 OC/W ORDER CODE: ASI10535 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICBO hFE Cob PG ηC IC = 1 mA IC = 5 mA IE = 1 mA VCB = 22 V TC = 25 C O NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 44 44 3.
5 0.
5 UNITS V V V mA --pF dB % VCE = 5.
0 V VCB = 22 V VCC = 22 V IC = 250 mA f = 1.
0 MHz POUT = 4.
0 W f = 2.
3 GHz 30 300 5.
0 9.
5 33 A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
A 1/1 ...


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