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HS1-82C37ARH-Q

Part Number	HS1-82C37ARH-Q
Manufacturer	Harris Corporation
Description	Radiation Hardened CMOS High Performance Programmable DMA Controller
Published	Mar 26, 2005
Detailed Description	S E M I C O N D U C T O R HS-82C37ARH Radiation Hardened CMOS High Performance Programmable DMA Controller Description ...
Datasheet	HS1-82C37ARH-Q PDF File

Overview

S E M I C O N D U C T O R HS-82C37ARH Radiation Hardened CMOS High Performance Programmable DMA Controller Description The Harris HS-82C37ARH is an enhanced, radiation hardened CMOS version of the industry standard 8237A Direct Memory Access (DMA) controller, fabricated using the Harris hardened ﬁeld, self-aligned silicon gate CMOS process.
The HS-82C37ARH offers increased functionality, improved performance, and dramatically reduced power consumption for the radiation environment.
The high speed, radiation hardness, and industry standard conﬁguration of the HS-82C37ARH make it compatible with radiation hardened microprocessors such as the HS-80C85RH and the HS-80C86RH.
The HS-82C37ARH can improve system performance by allowing external devices to transfer data directly to or from system memory.
Memory-to-memory transfer capability is also provided, along with a memory block initialization feature.
DMA requests may be generated by either hardware or software, and each channel is independently programmable with a variety of features for ﬂexible operation.
Static CMOS circuit design insures low operating power and allows gated clock operation for an even further reduction of power.
Multimode programmability allows the user to select from three basic types of DMA services, and reconﬁguration under program control is possible even with the clock to the controller stopped.
Each channel has a full 64K address and word count range, and may be programmed to autoinitialize these registers following DMA termination (end of process).
The Harris hardened ﬁeld CMOS process results in performance equal to or greater than existing radiation resistant products at a fraction of the power.
August 1995 Features • Radiation Hardened - Total Dose >105 RAD (Si) - Transient Upset > 108 RAD (Si)/s - Latch Up Free EPI-CMOS • Low Power Consumption - IDDSB = 50µA Maximum - IDDOP = 4.
0mA/MHz Maximum • Pin Compatible with NMOS 8237A and the Harris 82C37A • High Speed Data Transfers Up To 2.
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