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HSC226

Part Number	HSC226
Manufacturer	Hitachi Semiconductor
Description	Silicon Schottky Barrier Diode
Published	Mar 26, 2005
Detailed Description	HSC226 Silicon Schottky Barrier Diode ADE-208-831A (Z) Rev. 1 Aug. 2000 Features • Low reverse current, Low capacitance...
Datasheet	HSC226 PDF File

Overview

HSC226 Silicon Schottky Barrier Diode ADE-208-831A (Z) Rev.
1 Aug.
2000 Features • Low reverse current, Low capacitance.
• Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information Type No.
HSC226 Laser Mark S4 Package Code UFP Outline Cathode mark Mark 1 S4 2 1.
Cathode 2.
Anode HSC226 Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Non-Repetitive peak forward surge current Forward current Junction temperature Storage temperature Note: 10ms Sinewave 1pulse Symbol VRRM Value 25 200 50 125 −55 to +125 Unit V mA mA °C °C IFSM * IF Tj Tstg Electrical Characteristics (Ta = 25°C) Item Forward voltage Symbol VF1 VF2 Reverse current ...

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