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HN1K05FU

Toshiba Semiconductor
Part Number HN1K05FU
Manufacturer Toshiba Semiconductor
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Published Mar 26, 2005
Detailed Description HN1K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K05FU For Portable Devices High Speed Switching ...
Datasheet PDF File HN1K05FU PDF File

HN1K05FU
HN1K05FU

Overview
HN1K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K05FU For Portable Devices High Speed Switching Applications Interface Applications Unit: mm · · · High input impedance and extremely low drive current.
Vth is low and it is possible to drive directly at low-voltage CMOS.
: Vth = 0.
5 to 1.
0 V Suitable for high-density mounting because of a compact package.
Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD (Note) Tch Tstg Rating 20 10 100 200 150 -55 to 150 Unit V V mA mW °C °C JEDEC JEITA TOSHIBA Weight: 6.
8 m...


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