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BAS16WT1

ON Semiconductor
Part Number BAS16WT1
Manufacturer ON Semiconductor
Description Silicon Switching Diode
Published Mar 26, 2005
Detailed Description www.DataSheet4U.com BAS16WT1 Preferred Device Silicon Switching Diode Features • Pb−Free Package is Available http://...
Datasheet PDF File BAS16WT1 PDF File

BAS16WT1
BAS16WT1

Overview
www.
DataSheet4U.
com BAS16WT1 Preferred Device Silicon Switching Diode Features • Pb−Free Package is Available http://onsemi.
com MAXIMUM RATINGS (TA = 25°C) Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.
6 mm) Operating and Storage Junction Temperature Range Symbol VR IR IFM(surge) Value 75 200 500 Unit V mA mA 3 CATHODE 1 ANODE 3 MARKING DIAGRAM PD 200 1.
6 mW mW/°C °C 1 2 A6D TJ, Tstg −55 to +150 SC−70 CASE 419 STYLE 2 A6 D = Specific Device Code = Date Code Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously.
If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
ORDERING INFORMATION Device Package SC−70 SC−70 (Pb−Free) Shipping† 3000 / Tape & Reel 3000 / Tape & Reel THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.
6 mm) Symbol RqJA Max 625 Unit °C/W BAS16WT1 BAS16WT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2005 1 June, 2005− Rev.
6 Publication Order Number: BAS16WT1/D BAS16WT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Forward Voltage (IF = 1.
0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) Reverse Current (VR = 75 V) (VR = 75 V, TJ = 150°C) (VR = 25 V, TJ = 150°C) Capacitance (VR = 0, f = 1.
0 MHz) Reverse Recovery Time (IF = IR = 10 mA, RL = 50 W) (Figure 1) Stored C...


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