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BAV199W

Part Number	BAV199W
Manufacturer	NXP
Description	Low-leakage double diode
Published	Mar 26, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BAV199W Low-leakage double diode Product speciﬁcation Supers...
Datasheet	BAV199W PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BAV199W Low-leakage double diode Product speciﬁcation Supersedes data of 1998 Jan 09 1999 May 11 Philips Semiconductors Product speciﬁcation Low-leakage double diode FEATURES • Small plastic SMD package • Low leakage current: typ.
3 pA • Switching time: typ.
0.
8 µs • Continuous reverse voltage: max.
75 V • Repetitive peak reverse voltage: max.
85 V • Repetitive peak forward current: max.
500 mA.
APPLICATIONS • Low-leakage current applications in surface mounted circuits.
DESCRIPTION Epitaxial, medium-speed switching, double diode in a small plastic SOT323 (SC-70) SMD package.
The diodes are connected in series.
Marking code: JY- ...

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