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MIG50Q201H

Part Number	MIG50Q201H
Manufacturer	Toshiba Semiconductor
Description	High Power Switching Applications Motor Control Applications
Published	Mar 26, 2005
Detailed Description	MIG50Q201H TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG50Q201H High Power Switching Applications Motor C...
Datasheet	MIG50Q201H PDF File

Overview

MIG50Q201H TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG50Q201H High Power Switching Applications Motor Control Applications l Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over−current, realtime-current-control (RTC), under−voltage & over-temperature) in one package.
l The electrodes are isolated from case.
l High speed type IGBT : VCE (sat) = 3.
5 V (Max.
) toff = 2.
6 µs (Max.
) trr = 0.
21 µs (Max.
) : 2−110A1A : 520 g l Outline l Weight Equivalent Circuit 1 2001-05-29 MIG50Q201H Maximum Ratings (Tj = 25°C ) Stage Characteristic Supply voltage Collector−emitter voltage Inverter Collector current Forward current Collecto...

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MIG50Q201H High Power Switching Applications Motor Control Applications - Toshiba Semiconductor

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