DAN217U
Switching Diode (High speed switching)
●Outline
VRM 80 V IFM 300 mA Io 100 mA IFSM 4000 mA
●Feature High reliability
●Inner Circuit
Data sheet
NotNeRewcDoemsimgennsded for
●Application High speed switching
●Structure Epitaxial planar
●Absolute Maximum Ratings (Ta = 25ºC)
Parameter
Symbol
Reverse voltage
VR
Repetitive peak reverse voltage
VRM
Average rectified forward current
Io
Forward current
IFM
Peak forward surge current
IFSM
Power dissipation *
PD
Junction temperature Storage temperature
Tj Tstg
*2 elements total
●Characteristics (Ta = 25ºC)
Parameter
Symbol
Forward voltage...
DAN217U PDF File
