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D2089UK

Seme LAB
Part Number D2089UK
Manufacturer Seme LAB
Description METAL GATE RF SILICON FET
Published Mar 27, 2005
Detailed Description TetraFET D2089UK METAL GATE RF SILICON FET MECHANICAL DATA H B 4 3 1 G (2 pls) GOLD METALLISED MULTI-PURPOSE SILIC...
Datasheet PDF File D2089UK PDF File

D2089UK
D2089UK

Overview
TetraFET D2089UK METAL GATE RF SILICON FET MECHANICAL DATA H B 4 3 1 G (2 pls) GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W – 28V – 2GHz SINGLE ENDED FEATURES F E D 2 C (2 p ls) A • SIMPLIFIED AMPLIFIER DESIGN GATE DRAIN PIN 1 PIN 3 SOURCE SOURCE PIN 2 PIN 4 • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS DIM A B C D E F G H Millimetres 25.
40 45° 0.
76 5.
21 DIA 1.
02 0.
13 3.
18 3.
18 Tol.
0.
25 5° 0.
05 0.
13 0.
13 0.
02 0.
13 REF Inches 1.
00 45° 0.
030 0.
205 0.
040 0.
005 0.
125 0.
125 Tol.
0.
010 5° 0.
002 0.
005 0.
005 0.
001 0.
005 REF • LOW NOISE • HIGH GAIN APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from DC to 2 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 4W 65V ±20V 1A –65 to 150°C 200°C Semelab plc.
Telephone (01455) 556565.
Telex: 341927...


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