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CTS20MS

Intersil Corporation
Part Number CTS20MS
Manufacturer Intersil Corporation
Description Radiation Hardened Dual 4-Input NAND Gate
Published Mar 27, 2005
Detailed Description HCTS20MS September 1995 Radiation Hardened Dual 4-Input NAND Gate Pinouts 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKA...
Datasheet PDF File CTS20MS PDF File

CTS20MS
CTS20MS

Overview
HCTS20MS September 1995 Radiation Hardened Dual 4-Input NAND Gate Pinouts 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-183S CDIP2-T14 TOP VIEW A1 1 B1 2 NC 3 C1 4 D1 5 Y1 6 14 VCC 13 D2 12 C2 11 NC 10 B2 9 A2 8 Y2 Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Latch-Up Free Under Any Conditions • Military Temperature Range: -55 oC to +125oC GND 7 • Significant Power Reduction Compared to LSTTL ICs • DC Operating Voltage Range: 4.
5V to 5.
5V • LSTTL Input Compatibility - VIL = 0.
8V Max - VIH = VCC/2 Min • Input Current Levels Ii ≤ 5µA at VOL, VOH 14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-183S CDFP3-F14 TOP VIEW A1 B1 NC C1 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VCC D2 C2 NC B2 A2 Y2 Description The Intersil HCTS20...


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