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3SK239A

Hitachi Semiconductor
Part Number 3SK239A
Manufacturer Hitachi Semiconductor
Description GaAs Dual Gate MES FET
Published Mar 30, 2005
Detailed Description 3SK239A GaAs Dual Gate MES FET Application UHF RF amplifier Features • Excellent low noise characteristics (NF = 1.3 d...
Datasheet PDF File 3SK239A PDF File

3SK239A
3SK239A

Overview
3SK239A GaAs Dual Gate MES FET Application UHF RF amplifier Features • Excellent low noise characteristics (NF = 1.
3 dB Typ at f = 900 MHz) • Capable of low voltage operation Outline 3SK239A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 –6 –6 50 100 125 –55 to +125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min — –6 –6 — — 14 — — 20 — — — 17 — Typ — — — — — 19 –1.
2 –1.
2 31 0.
58 0.
36 0.
028 19 1.
3 Max 50 — — –5 –5 28 –1.
6 –1.
6 — 1.
0 0.
6 0.
05 — 2.
0 Unit µA V V µA µ...


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