DatasheetsPDF.com

LZ402

Part Number	LZ402
Manufacturer	Polyfet RF Devices
Description	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Published	Mar 30, 2005
Detailed Description	polyfet rf devices LZ402 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF ...
Datasheet	LZ402 PDF File

Overview

polyfet rf devices LZ402 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 125.
0 Watts Single Ended Package Style LZ HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 230 Watts Junction to Case Thermal Resistance o 0.
75 C/W Maximum Junction Temperature o...

Similar Datasheet

LZ4-00A100 High Luminous Efficacy Amber LED Emitter - LED Engin
LZ4-00GW08 Gallery White LED Emitter - LED Engin
LZ4-00UBH0 LED - OSRAM
LZ4-20A100 High Luminous Efficacy Amber LED Emitter - LED Engin
LZ4-40A100 High Luminous Efficacy Amber LED Emitter - LED Engin
LZ402 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR - Polyfet RF Devices

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)