Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier
Description
CORPORATION
Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier
M116
FEATURES
Low IGSS Integrated Zener Clamp for Gate Protection
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate to Drain Voltage . . . . . . ....
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