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FGP20N6S2

Fairchild Semiconductor
Part Number FGP20N6S2
Manufacturer Fairchild Semiconductor
Description 600V/ SMPS II Series N-Channel IGBT
Published Mar 30, 2005
Detailed Description FGH20N6S2 / FGP20N6S2 / FGB20N6S2 August 2003 FGH20N6S2 / FGP20N6S2 / FGB20N6S2 600V, SMPS II Series N-Channel IGBT Ge...
Datasheet PDF File FGP20N6S2 PDF File

FGP20N6S2
FGP20N6S2

Overview
FGH20N6S2 / FGP20N6S2 / FGB20N6S2 August 2003 FGH20N6S2 / FGP20N6S2 / FGB20N6S2 600V, SMPS II Series N-Channel IGBT General Description The FGH20N6S2, FGP20N6S2, FGB20N6S2, are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and high avalanche capability (UIS).
These LGC devices shorten delay times, and reduce the power requirement of the gate drive.
These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential.
SMPS II LGC devices have been specially designed for: • • • • • • Power Factor Correction (PFC) circuits Full bridge topologies Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits Features • 100kHz Operation at 390V, 7A • 200kHZ Operation at 390V, 5A • 600V Switching SOA Capability • Typical Fall Time .
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85ns at TJ = 125oC • Low Gate Charge .
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30nC at VGE = 15V • Low Plateau Voltage .
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5V Typical • UIS Rated .
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100mJ • Low Conduction Loss • Low Eon Formerly Developmental Type TA49330.
Package TO-247 E C G Symbol C TO-220AB E C G TO-263AB G G E E COLLECTOR (Back-Metal) COLLECTOR (Flange) Device Maximum Ratings TC= 25°C unless otherwise noted Symbol BVCES IC25 IC110 ICM VGES VGEM SSOA EAS EARV PD TJ TSTG Parameter Collector to Emitter Breakdown Voltage Collector Current Continuous, TC = 25°C Collector Current Continuous, TC = 110°C Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150°C, Figure 2 Pulsed Avalanche Energy, ICE = 7.
0A, L = 4mH, VDD = 50V Pulsed Avalanche Energy, ICE = 7.
0A, L = 4mH, VDD = 50V Power Dissipation Total TC = 25°C Power Dissipation Derating TC > 25°C Opera...


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