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FGS15N40L

Fairchild Semiconductor
Part Number FGS15N40L
Manufacturer Fairchild Semiconductor
Description Electrical Characteristics of IGBT
Published Mar 30, 2005
Detailed Description FGS15N40L September 2001 IGBT FGS15N40L General Description Insulated Gate Bipolar Transistors(IGBTs) with trench gate...
Datasheet PDF File FGS15N40L PDF File

FGS15N40L
FGS15N40L

Overview
FGS15N40L September 2001 IGBT FGS15N40L General Description Insulated Gate Bipolar Transistors(IGBTs) with trench gate structure have superior performance in conductance and switching to planar gate structure and also have wide noise immunity.
These devices are well suitable for strobe application Features • High Input Impedance • High Peak Current Capability (130A) • Easy Gate Drive Application • Strobe Flash C C C C G E C E E G E 8-SOP Absolute Maximum Ratings Symbol VCES VGES ICM (1) PC TJ Tstg TL TC = 25°C unless otherrwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Operating Junction Temperature Stor...


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