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FJV4109R

Fairchild Semiconductor
Part Number FJV4109R
Manufacturer Fairchild Semiconductor
Description PNP Epitaxial Silicon Transistor
Published Mar 30, 2005
Detailed Description FJV4109R FJV4109R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driv...
Datasheet PDF File FJV4109R PDF File

FJV4109R
FJV4109R

Overview
FJV4109R FJV4109R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=4.
7KΩ) • Complement to FJV3109R 3 2 1 SOT-23 1.
Base 2.
Emitter 3.
Collector Marking Equivalent Circuit C R79 B R PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value -40 -40 -5 -100 200 150 -55 ~ 150 E Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO ICBO hFE VCE (sat) Cob fT R Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Input Resistor Test Condition IC= -100µA, IE=0 IC= -1mA, IB=0 VCB= -30V, IE=0 VCE= -5V, IC= -1mA IC= -10mA, IB= -1mA VCB= -10V, IE=0 f=1MHz VCE= -10V, IC= -5mA 3.
2 5.
5 200 4.
7 6.
2 100 Min.
-40 -40 -0.
1 600 -0.
3 V pF MHz KΩ Typ.
Max.
Units V V µA ©2002 Fairchild Semiconductor Corporation Rev.
A, August 2002 FJV4109R Typical Characteristics 10k -1000 VCE(sat)[mV], SATURATION VOLTAGE VCE = - 5V R = 4.
7K IC = 10IB R = 4.
7k hFE, DC CURRENT GAIN 1k -100 100 -10 10 -0.
1 -1 -1 -10 -100 -1 -10 -100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1.
DC current Gain Figure 2.
Collector-Emitter Saturation Voltage 400 350 PC[mW], POWER DISSIPATION 300 250 200 150 100 50 0 0 25 50 o 75 100 125 150 175 Ta[ C], AMBIENT TEMPERATURE Figure 3.
Power Derating ©2002 Fairchild Semiconductor Corporation Rev.
A, August 2002 FJV4109R Package Dimensions SOT-23 0.
20 MIN 2.
40 ±0.
10 0.
40 ±0.
03 1.
30 ±0.
10 0.
45~0.
60 0.
03~0.
10 0.
38 REF 0.
40 ±0.
03 0.
96~1.
14 2.
90 ±0.
10 0.
12 –0.
023 +0.
05 0.
95 ±0.
03 0.
95 ±0...


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