FLLD261
HIGH CONDUCTANCE LOW LEAKAGE DIODE
PD . . . .350 mW @ TA = 25 Deg C BV . . . .200 V (MIN) @ IR = 5 uA ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature Operating Junction Temperature -55 to +150 Degrees C -55 to +150 Degrees C PACKAGE TO-236AB (Low)
3
P8A
1 2
CONNECTION DIAGRAMS
3
POWER DISSIPATION (NOTES 2 & 3) Total Device Dissi...
