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FMBL1G200US60

Part Number	FMBL1G200US60
Manufacturer	Fairchild Semiconductor
Description	Molding Type Module
Published	Mar 30, 2005
Detailed Description	FMBL1G200US60 July 2001 IGBT FMBL1G200US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar ...
Datasheet	FMBL1G200US60 PDF File

Overview

FMBL1G200US60 July 2001 IGBT FMBL1G200US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness.
They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
Features • • • • • • UL Certified No.
E209204 Short circuit rated 10us @ TC = 100°C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.
2 V @ IC = 200A High input impedance Fast & soft anti-parallel FWD Package Code : 7PM-BB E1/C2 Application C1 E2 • Boost (Step Up) Converter G2 E2 Internal Circuit Diagram Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg Viso Mounting Torque TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminals Screw : M5 Mounting Screw : M6 @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ AC 1minute FMBL1G200US60 600 ± 20 200 400 200 400 10 830 -40 to +150 -40 to +125 2500 2.
0 2.
5 Units V V A A A A us W °C °C V N.
m N.
m Notes : (1) Repetitive rating : Pulse width limited by max.
junction temperature ©2001 Fairchild Semiconductor Corporation FMBL1G200US60 Rev.
A FMBL1G200US60 Electrical Characteristics of IGBT T Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min.
Typ.
Max.
Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff.
of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.
6 ----250 ± 100 V V/°C uA nA On Characteristic...

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FMBL1G200US60 Molding Type Module - Fairchild Semiconductor

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