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FC808

Sanyo Semicon Device
Part Number FC808
Manufacturer Sanyo Semicon Device
Description High-Speed Switching Composite Diode Cathode Common
Published Mar 30, 2005
Detailed Description Ordering number :EN4338A FC808 Silicon Epitaxial Plannar Type High-Speed Switching Composite Diode (Cathode Common) Fe...
Datasheet PDF File FC808 PDF File

FC808
FC808

Overview
Ordering number :EN4338A FC808 Silicon Epitaxial Plannar Type High-Speed Switching Composite Diode (Cathode Common) Features · Composite type with 4 diodes contained in the CP package currently in use, saving the mounting space greatly.
· Fast switching speed.
Package Dimensions unit:mm 1250A [FC808] 1:Anode 2:Anode 3:Anode 4:Cathode 5:Anode Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Reverse Voltage Surge Current Average Rectified Current Peak Forward Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VRM VR IFSM IO* IFM* P* Tj Tstg 10ms* Conditions Ratings SANYO:CP5 Unit 85 80 2 100 300 200 150 V V A mA mA mW ˚C ˚C –55 to +150 Note) *:Unit rating.
The total rating is 150% of the unit rating.
Electrical Characteristics at Ta = 25˚C Parameter Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Symbol VF IR C trr IF=10mA IF=100mA VR=50V VR=80V VR=0V, f=1MHz IF=10mA, VR=6V, RL=5Ω...


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