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FCP11N60

Fairchild Semiconductor
Part Number FCP11N60
Manufacturer Fairchild Semiconductor
Description SuperFET MOSFET
Published Mar 30, 2005
Detailed Description FCP11N60 / FCPF11N60 — N-Channel SuperFET® MOSFET FCP11N60/FCPF11N60 March 2014 General Description SuperFET® MOSFET ...
Datasheet PDF File FCP11N60 PDF File

FCP11N60
FCP11N60


Overview
FCP11N60 / FCPF11N60 — N-Channel SuperFET® MOSFET FCP11N60/FCPF11N60 March 2014 General Description SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.
This technology is tailored to minimize conduction loss, provide superior switch-ing performance, dv/dt rate and higher avalanche energy.
Con-sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Features • 650V @Tj = 150°C • Typ.
Rds(on)=0.
32Ω • Ultra low gate charge (typ.
Qg=40nC) • Low effective output capacitance (typ.
Coss.
eff=95pF) • 100% avalanche tested • RoHS Compliant D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) EAR Repetitive Avalanche Energy (Note 1) dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds * Drain current limited by maximum junction termperature FCP11N60 FCPF11N60 11 11* 7 7* 33 33* ± 30 340 11 12.
5 4.
5 125 36 1.
0 0.
29 -55 to +150 300 Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient FCP11N60 1.
0 0.
5 62.
5 FCPF11N60 3.
5 -62.
5 Units A A A V mJ A mJ V/ns W W/°C °C °C Units °C/W °C/W °C/W ©2008 Fairchild Semiconductor Corporation FCP11N60/FCPF11N60 Rev.
C0 1 www.
fairchildsemi.
com FCP11N60 / FCPF11N60 — N-Channel SuperFET® ...



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