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FDB5690

Fairchild Semiconductor
Part Number FDB5690
Manufacturer Fairchild Semiconductor
Description 60V N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDP5690/FDB5690 July 2000 FDP5690/FDB5690 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET...
Datasheet PDF File FDB5690 PDF File

FDB5690
FDB5690

Overview
FDP5690/FDB5690 July 2000 FDP5690/FDB5690 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency.
Features • 32 A, 60 V.
RDS(ON) = 0.
027 Ω @ VGS = 10 V RDS(ON) = 0.
032 Ω @ VGS = 6 V.
• Critical DC electrical parameters specified at evevated temperature.
• Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
• High performance trench technology for extremely low RDS(ON).
• 175°C maximum junction temperature rating.
D D G G D S TO-220 FDP Series G S TC = 25°C unless otherwise noted TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drai...


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