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FDC5614P

Fairchild Semiconductor
Part Number FDC5614P
Manufacturer Fairchild Semiconductor
Description 60V P-Channel Logic Level PowerTrench MOSFET
Published Mar 30, 2005
Detailed Description FDC5614P February 2002 FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET General Description This 60V P-Channel M...
Datasheet PDF File FDC5614P PDF File

FDC5614P
FDC5614P

Overview
FDC5614P February 2002 FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET General Description This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process.
It has been optimized for power management applications.
Features • –3 A, –60 V.
RDS(ON) = 0.
105 Ω @ VGS = –10 V RDS(ON) = 0.
135 Ω @ VGS = –4.
5 V Applications • DC-DC converters • Load switch • Power management • Fast switching speed • High performance trench technology for extremely low RDS(ON) D D S 1 2 G 6 5 4 SuperSOT TM -6 D D 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation TA=25oC unless otherwise noted Parameter Ratings –60 ±20 (Note 1a) Units V V A W °C –3 –20 1.
6 0.
8 –55 to +150 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note...


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