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FDC602P

Fairchild Semiconductor
Part Number FDC602P
Manufacturer Fairchild Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDC602P April 2001 FDC602P P-Channel 2.5V PowerTrench® Specified MOSFET General Description This P-Channel 2.5V speci...
Datasheet PDF File FDC602P PDF File

FDC602P
FDC602P

Overview
FDC602P April 2001 FDC602P P-Channel 2.
5V PowerTrench® Specified MOSFET General Description This P-Channel 2.
5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process.
It has been optimized for power management applications with a wide range of gate drive voltage (2.
5V – 12V).
Applications • Battery management • Load switch • Battery protection Features • –5.
5 A, –20 V RDS(ON) = 35 mΩ @ VGS = –4.
5 V RDS(ON) = 50 mΩ @ VGS = –2.
5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) S D D SuperSOT TM-6 G D D Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Maximum Power Dissipation (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJ C Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size .
602 FDC602P 7’’ 1 6 2 5 3 4 Ratings –20 ±12 –5.
5 –20 1.
6 0.
8 –55 to +150 78 30 Tape width 8mm Units V V A W °C °C/W °C/W Quantity 3000 units ©2001 Fairchild Semiconductor Corporation FDC602P Rev C(W) FDC602P Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –20 V ∆BV DSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA, Referenced to 25°C VDS = –16 V, VGS = 0 V –14 mV/°C –1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA On Characteristics (Note 2) V GS(th) Gate Threshold Voltage ∆V GS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID(on...


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