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FDC6036P

Fairchild Semiconductor
Part Number FDC6036P
Manufacturer Fairchild Semiconductor
Description P-Channel 1.8V Specified PowerTrench MOSFET
Published Mar 30, 2005
Detailed Description FDC6036P January 2004 FDC6036P P-Channel 1.8V Specified PowerTrench MOSFET General Description This dual P-Channel 1....
Datasheet PDF File FDC6036P PDF File

FDC6036P
FDC6036P

Overview
FDC6036P January 2004 FDC6036P P-Channel 1.
8V Specified PowerTrench MOSFET General Description This dual P-Channel 1.
8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.
Packaged in FLMP SSOT-6, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.
Features • –5 A, –20 V.
RDS(ON) = 44 mΩ @ VGS = –4.
5 V RDS(ON) = 64 mΩ @ VGS = –2.
5 V RDS(ON) = 95 mΩ @ VGS = –1.
8 V • Low gate charge, High Power and Current handling capability • High performance trench technology for extremely low RDS(ON) • FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size Bottom Drain Contact Applications • Batt...


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