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FDC6392S

Fairchild Semiconductor
Part Number FDC6392S
Manufacturer Fairchild Semiconductor
Description P-Channel MOSFET & Schottky Diode
Published Mar 30, 2005
Detailed Description FDC6392S April 2002 FDC6392S 20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description The F...
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FDC6392S
FDC6392S

Overview
FDC6392S April 2002 FDC6392S 20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description The FDC6392S combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SSOT-6 package.
This device is designed specifically as a single package solution for DC to DC converters.
It features a fast switching, low gate charge MOSFET with very low onstate resistance.
The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
Features MOSFET: • –2.
2 A, –20V.
RDS(ON) = 150 mΩ @ VGS = –4.
5V RDS(ON) = 200 mΩ @ VGS = –2.
5V • Low Gate Charge (3.
7nC typ) • Compact industry standard SuperSOT-6 package Schottky: • VF < 0.
45 V @ 1 A S1 D1 D2 1 G2 S2 6 5 4 2 3 SuperSOT TM -6 Pin 1 G1 SuperSOT™-6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD MOSFET Drain-Source Voltage MOSFET Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings –20 ±12 (Note 1a) Units V V A W –2.
2 –6 0.
96 0.
9 0.
7 –55 to +150 20 1 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG VRRM IO Operating and Storage Junction Temperature Range Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current (Note 1a) °C V A Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 130 60 °C/W Package Marking and Ordering Information Device Marking .
392 Device FDC6392S Reel Size 7’’ Tape width 8mm Quantity 3000 units 2002 Fairchild Semiconductor Corporation FDC6392S Rev C(W) FDC6392S Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2)...


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