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FDF5680

Fairchild Semiconductor
Part Number FDF5680
Manufacturer Fairchild Semiconductor
Description 60V N-Channel PowerTrench MOSFET
Published Mar 30, 2005
Detailed Description FDP5680/FDB5680 July 2000 FDP5680/FDB5680 General Description 60V N-Channel PowerTrenchTM MOSFET Features • 40 A, 60 ...
Datasheet PDF File FDF5680 PDF File

FDF5680
FDF5680

Overview
FDP5680/FDB5680 July 2000 FDP5680/FDB5680 General Description 60V N-Channel PowerTrenchTM MOSFET Features • 40 A, 60 V.
RDS(ON) = 0.
020 Ω @ VGS = 10 V RDS(ON) = 0.
023 Ω @ VGS = 6 V.
• Critical DC electrical parameters specified at evevated temperature.
• Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
• High performance trend technology for extremely low RDS(ON).
• 175°C maximum junction temperature rating.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency.
D D G G D TO-220 S FDP Series G S TC = 25°C unless otherwise noted TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Parameter FDP5680 60 ±20 40 120 65 0.
43 FDB5680 Units V V A W W/°C °C - Continuous - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range -65 to +175 Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.
3 62.
5 °C/W °C/W Package Marking and Ordering Information Device Marking FDB5680 FDP5680 Device FDB5680 FDP5680 Reel Size 13’’ Tube Tape Width 24mm N/A Quantity 800 45 2000 Fairchild Semiconductor International FDP5680/FDB5680 Rev.
C FDP5680/FDB5680 Electrical Characteristics Symbol WDSS IAR Tc = 25°C unless otherwise noted Parameter (Note1) Test Conditions Min Typ Max 90 40 Units mJ A Drain-Source Avalanche Ratings Single Pulse Drain-Source VDD = 30 V, ID = 40A Avalanche Energy Maximum Drain-Source Avalanche Current Off Characteristics BVDSS ∆BVDSS ∆T J IDSS IGSSF IGSSR Drain-Source B...


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