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FDG326P

Fairchild Semiconductor
Part Number FDG326P
Manufacturer Fairchild Semiconductor
Description P-Channel 1.8V Specified PowerTrench MOSFET
Published Mar 30, 2005
Detailed Description FDG326P January 2001 FDG326P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V spec...
Datasheet PDF File FDG326P PDF File

FDG326P
FDG326P

Overview
FDG326P January 2001 FDG326P P-Channel 1.
8V Specified PowerTrench MOSFET General Description This P-Channel 1.
8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management applications.
Features • –1.
5 A, –20 V.
RDS(ON) = 140 mΩ @ VGS = –4.
5 V RDS(ON) = 180 mΩ @ VGS = –2.
5 V RDS(ON) = 250 mΩ @ VGS = –1.
8 V Applications • Battery management • Load switch • Low gate charge • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC70-6 surface mount package 1 6 2 5 3 4 SC70-6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings –20 ±8 (Note 1a) Units V V A W °C –1.
5 –6 0.
75 0.
48 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resi...


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