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FDG361N

Fairchild Semiconductor
Part Number FDG361N
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDG361N August 2001 FDG361N N-Channel 100V Specified PowerTrenchMOSFET General Description These N-Channel 100V speci...
Datasheet PDF File FDG361N PDF File

FDG361N
FDG361N

Overview
FDG361N August 2001 FDG361N N-Channel 100V Specified PowerTrenchMOSFET General Description These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Features • 0.
6 A, 100 V.
RDS(ON)= 500 mΩ @ VGS = 10 V RDS(ON)= 550 mΩ @ VGS = 6.
0 V • Low gate charge (3.
7nC typical) • Fast switching speed • High performance trench...


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