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FDN357N

Fairchild Semiconductor
Part Number FDN357N
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description March 1998 FDN357N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOTTM-3 N-Ch...
Datasheet PDF File FDN357N PDF File

FDN357N
FDN357N

Overview
March 1998 FDN357N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Features 1.
9 A, 30 V, RDS(ON) = 0.
090 Ω @ VGS = 4.
5 V RDS(ON) = 0.
060 Ω @ VGS = 10 ...


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