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FDN358P

Fairchild Semiconductor
Part Number FDN358P
Manufacturer Fairchild Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description March 1998 FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOTTM-3 P-Ch...
Datasheet PDF File FDN358P PDF File

FDN358P
FDN358P

Overview
March 1998 FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Features -1.
5 A, -30 V, RDS(ON) = 0.
125 Ω @ VGS = -10 V RDS(ON) = 0.
20 Ω @ VGS = - ...


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