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FDR842P

Fairchild Semiconductor
Part Number FDR842P
Manufacturer Fairchild Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDR842P December 2001 FDR842P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel –1.8V sp...
Datasheet PDF File FDR842P PDF File

FDR842P
FDR842P

Overview
FDR842P December 2001 FDR842P P-Channel 1.
8V Specified PowerTrench MOSFET General Description This P-Channel –1.
8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management applications.
Features • –11 A, –12 V RDS(ON) = 9 mΩ @ VGS = –4.
5 V RDS(ON) = 12 mΩ @ VGS = –2.
5 V RDS(ON) = 16 mΩ @ VGS = –1.
8 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability Applications • Power management • Load switch • Battery protection D S D S 5 6 4 3 2 1 SuperSOT -8 TM D D D G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings –12 ±8 (Note 1a) Units V V A W –11 –50 1.
8 1.
0 0.
9 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 70 20 °C/W °C/W Package Marking and Ordering Information Device Marking FDR842P Device FDR842P Reel Size 13’’ Tape width 12mm Quantity 2500 units 2001 Fairchild Semiconductor Corporation FDR842P Rev D (W) FDR842P Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions ID = –250 µA VGS = 0 V, ID = –250 µA, Referenced to 25°C VDS = –10 V, VGS = 8 V, VGS = –8 V, VGS = 0 V VDS = 0 V VDS = 0 V ID = –250 µA Min –12 Typ Max Units V Off Characteristics –4.
4 –1 100 –100 –0.
4 –0.
5 2.
7 7 9 12 9 –50 56 5350 2135 1386 17 20 201 161 VDS = –6 V, VGS = –4.
5 V ID = –11 A, 57 7 16 –1.
5 (...


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